Bak-Misiuk, J : rechercher sur Z-Library

Année:

1999

Langue:

english

Fichier:

PDF, 162 KB

english, 1999

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

A. Misiuk, H.B. Surma, J. Bak-Misiuk, A. Romano-Rodriguez, A. Wnuk, A. Brzozowski, A. Bachrouri, A. Barcz

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 121 KB

english, 2000

Structure of Oxygen - Implanted Silicon Single Crystals Treated at ≥1400 K under High Argon Pressure

A. Misiuk, A. Barcz, J. Ratajczak, J. Katcki, J. Bak-Misiuk, L. Bryja, B. Surma, G. Gawlik

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 636 KB

english, 2001

Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates

J. Bak-Misiuk, E. Dynowska, A. Misiuk, M. Calamiotou, A. Kozanecki, J. Domagala, D. Kuristyn, W. Glukhanyuk, A. Georgakilas, J. Trela, J. Adamczewska

Journal:

Advanced Engineering Materials

Année:

2001

Langue:

english

Fichier:

PDF, 227 KB

english, 2001

Electrical and Structural Properties of Oxygen-Containing Silicon Annealed at 670–720 K Under High Stress

A. Kudla, A. Misiuk, A. Panas, J. Bak-Misiuk

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 145 KB

english, 2002

Stress-induced structural changes in thin InAs layers grown on GaAs substrate

J. Bak-Misiuk, A. Shalimov, J. Kaniewski, A. Misiuk, E. Dynowska, K. Reginski, J. Trela, T. Przesławski, J. Hartwig

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 185 KB

english, 2003

Pressure assisted evolution of defects in silicon

C. A. Londos, M. S. Potsidi, J. Bak-Misiuk, A. Misiuk, V. V. Emtsev

Journal:

Prof. Dr. J. Auleytner, J. Bak-Misiuk, Z. Furmanik, J. Morawiec

Année:

2003

Langue:

english

Fichier:

PDF, 61 KB

english, 2003

On the possibility of application of x-ray diffraction edge contrast for the quantitative determination of high-energy heavy ion range in silicon

Journal:

Dr. J. Härtwig, H.-J. Witt, Dr. J. Bąk-Misiuk

Année:

1988

Langue:

english

Fichier:

PDF, 350 KB

english, 1988

Representation of simulated X-ray topographs by means of the FEAG 200 device

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 621 KB

english, 1988

Determination of Ga1−xAlxAs epitaxial layer composition by X-ray intensity measurements of quasi-forbidden reflections

J. Bak-Misiuk, W. Paszkowicz, J. Domagał, S. Miotkowska, Z.R. Zytkiewicz

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 485 KB

english, 1993

Structural characterization of InxGa1−xAs/Inp layers under different stresses

J. Bak-Misiuk, K. Orlińska, J. Kaniewski, A. Shalimov, E. Lusakowska, A. Misiuk, J. Muszalski, W. Wierzchowski, K. Wieteska, W. Graeff

Journal:

Applied Surface Science

Année:

2006

Langue:

english

Fichier:

PDF, 554 KB

english, 2006

Structural characterisation of self-implanted Si after HT-HP treatment

W. Rzodkiewicz, A. Kudła, A. Misiuk, B. Surma, J. Bąk-Misiuk

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 281 KB

english, 2005

Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

A. Misiuk, B. Surma, A. Barcz, K. Orlinska, J. Bak-Misiuk, I.V. Antonova, S. Dub

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 189 KB

english, 2005

Effect of annealing under stress on defect structure of Si–Ge

A. Misiuk, N.V. Abrosimov, P. Romanowski, J. Bak-Misiuk, A. Wnuk, B. Surma, W. Wierzchowski, K. Wieteska, W. Graeff, M. Prujszczyk

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 653 KB

english, 2008

Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

W. Rzodkiewicz, A. Kudla, A. Misiuk, B. Surma, J. Bak-Misiuk, J. Härtwig, J. Ratajczak

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 259 KB

english, 2004

Effect of pressure annealing on structure of Si:Mn

A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 177 KB

english, 2006

Defects in Ge-doped Cz-Si annealed under high stress

A. Misiuk, Deren Yang, B. Surma, C.A. Londos, J. Bak-Misiuk, A. Andrianakis

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2006

Langue:

english

Fichier:

PDF, 237 KB

english, 2006

Strain and defect structure of iron implanted In0.53Ga0.47As using high-resolution X-ray diffraction

P. Too, J.Z. Domagala, J. Bak-Misiuk, A. Kozanecki, S. Ahmed, B.J. Sealy

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 148 KB

english, 2005

Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si

A. Misiuk, C.A. Londos, J. Bak-Misiuk, Deren Yang, W. Jung, M. Prujszczyk

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2006

Langue:

english

Fichier:

PDF, 485 KB

english, 2006

Strain release in InGaAs/InxAl1−xAs/InP heterostructures

O. Yastrubchak, J. Bak-Misiuk, E. Łusakowska, J. Kaniewski, J.Z. Domagala, T. Wosiński, A. Shalimov, K. Regiński, A. Kudla

Journal:

International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements

Année:

2003

Langue:

english

Fichier:

PDF, 344 KB

english, 2003

X-ray study of Si crystals irradiated by fast uranium ions

J. Auleytner, J. Bak-Misiuk, Z. Furmanik, M. Toulemonde, J. Vetter

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 226 KB

english, 1991

Defect-related light emission from processed He-implanted silicon

J. Bak-Misiuk, A. Misiuk, P. Romanowski, A. Wnuk, J. Trela

Journal:

Journal of Luminescence

Année:

2006

Langue:

english

Fichier:

PDF, 173 KB

english, 2006

Stress-mediated redistribution of Mn in annealed Si:Mn

A. Misiuk, A. Barcz, J. Bak-Misiuk, P. Romanowski, L. Chow, E. Choi

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 201 KB

english, 2009

Revealing the defects in electron-irradiated Czochralski silicon

A. Misiuk, J. Bak-Misiuk, W. Jung, J. Felba, W. Wierzchowski, K. Wieteska, M. Prujszczyk

Journal:

Radiation Measurements

Année:

2010

Langue:

english

Fichier:

PDF, 596 KB

english, 2010

Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure

A. Misiuk, W. Wierzchowski, B. Surma, A. Wnuk, J. Bak-Misiuk, K. Wieteska, A. Barcz, A. Andrianakis, C.A. Londos, D. Yang, M. Prujszczyk, W. Graeff

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 280 KB

english, 2009

Creation of MnAs nanoclusters during processing of GaMnAs

J. Bak-Misiuk, J.Z. Domagala, P. Romanowski, E. Dynowska, E. Lusakowska, A. Misiuk, W. Paszkowicz, J. Sadowski, A. Barcz, W. Caliebe

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 275 KB

english, 2009

Thermally induced defects in silicon irradiated with fast neutrons

A. Misiuk, W. Wierzchowski, K. Wieteska, P. Romanowski, J. Bak-Misiuk, M. Prujszczyk, C.A. Londos, W. Graeff

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 339 KB

english, 2009

Defects in silicon introduced by helium implantation and subsequent annealing

I. Capan, J. Bak-Misiuk, B. Pivac, P. Dubček, A. Misiuk, S. Bernstorff, P. Romanowski

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 783 KB

english, 2011

Structural and magnetic properties of GaSb:MnSb granular layers

E. Dynowska, J. Bak-Misiuk, P. Romanowski, J.Z. Domagala, J. Sadowski, T. Wojciechowski, S. Kret, B. Kurowska, A. Kwiatkowski, W. Caliebe

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2011

Characterization of an Yb:LuVO4 single crystal using X-ray topography, high-resolution X-ray diffraction, and X-ray photoelectron spectroscopy

W. Paszkowicz, P. Romanowski, J. Bąk-Misiuk, W. Wierzchowski, K. Wieteska, W. Graeff, R.J. Iwanowski, M.H. Heinonen, O. Ermakova, H. Dąbkowska

Journal:

Victor G. Zavodinsky, Anton A. Gnidenko, Andrzej Misiuk, Jadwiga Bak-Misiuk

Année:

2011

Langue:

english

Fichier:

PDF, 847 KB

english, 2011

Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon

A. Misiuk, B. Surma, J. Bak-Misiuk, I.V. Antonova, S.A. Smagulova

Journal:

Vacuum

Année:

2005

Langue:

english

Fichier:

PDF, 244 KB

english, 2005

Ab initio simulation of high pressure influence on He–H interaction in silicon

Journal:

Vacuum

Année:

2005

Langue:

english

Fichier:

PDF, 160 KB

english, 2005

Structural characterization of MBE-grown HgSe : Fe layers: X-ray diffraction and Raman spectroscopy

W. Szuszkiewicz, J. Bąk-Misiuk, E. Dynowska, M. Jouanne, J.F. Morhange, H. Wissmann, T. Tran Anh, M. von Ortenberg

Journal:

Journal of Crystal Growth

Année:

2000

Langue:

english

Fichier:

PDF, 199 KB

english, 2000

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x

A Mycielski, A Szadkowski, E Łusakowska, L Kowalczyk, J Domagała, J Bąk-Misiuk, Z Wilamowski

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 98 KB

english, 1999

Magnetooptical study of s,p–d exchange interaction in zinc blende Mg1−xMnxTe

I. Kuryliszyn, A. Stachow-Wójcik, A. Twardowski, E. Janik, E. Dynowska, J. Bak-Misiuk

Journal:

Solid State Communications

Année:

2002

Langue:

english

Fichier:

PDF, 82 KB

english, 2002

Effect of stress on interface transformation in thin semiconducting layers

J Bak-Misiuk, J Domagala, A Misiuk, J Sadowski, Z.R Zytkiewicz, J Trela, I.V Antonova

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 1012 KB

english, 2000

Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

A Misiuk, J Bąk-Misiuk, A Barcz, A Romano-Rodriguez, I.V Antonova, V.P Popov, C.A Londos, J Jun

Journal:

International Journal of Hydrogen Energy

Année:

2001

Langue:

english

Fichier:

PDF, 245 KB

english, 2001

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

J Bak-Misiuk, A Misiuk, K.S Zhuravlev, J.Z Domagala, J Adamczewska, V.V Preobrazhenskii

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 83 KB

english, 2001

The effect of high temperature–high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski silicon

C.A. Londos, M. Potsidou, A. Misiuk, V.V. Emtsev, J. Bak-Misiuk

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 89 KB

english, 2001

Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

A. Misiuk, A. Barcz, V. Raineri, J. Ratajczak, J. Bak-Misiuk, I.V. Antonova, W. Wierzchowski, K. Wieteska

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 167 KB

english, 2001

Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

A Wolkenberg, T Przesławski, J Kaniewski, J Bąk-Misiuk, K Regiński

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 172 KB

english, 2000

Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

A Misiuk, A Barcz, J Ratajczak, M Lopez, A Romano-Rodriguez, J Bak-Misiuk, H.B Surma, J Jun, I.V Antonova, V.P Popov

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 232 KB

english, 2000

Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

V.P. Popov, I.V. Antonova, J. Bak-Misiuk, J. Domagala

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2001

Langue:

english

Fichier:

PDF, 130 KB

english, 2001

Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures

J. Sadowski, R. Mathieu, P. Svedlindh, M. Karlsteen, J. Kanski, L. Ilver, H. Åsklund, K. Świątek, J.Z. Domagała, J. Bąk-Misiuk, D. Maude

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 121 KB

english, 2001

Effect of high temperature - pressure on SOI structure

A Misiuk, L Bryja, J Bak-Misiuk, J Ratajczak, I.V Antonova, V.P Popov

Journal:

Crystal Engineering

Année:

2002

Langue:

english

Fichier:

PDF, 103 KB

english, 2002

Porous-like silicon prepared from Si:H annealed at high argon pressure

A. Misiuk, K. S. Zhuravlev, L. Bryja, J. Bak-Misiuk, I. V. Antonova, E. N. Vandyshev, A. Barcz, M. Kaniewska, A. Romano-Rodriguez, C. Kovacsics

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 271 KB

english, 2003

Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

I. V. Antonova, C. A. Londos, J. Bak-Misiuk, A. K. Gutakovskii, M. S. Potsidi, A. Misiuk

Journal:

Vladimir M. Kaganer, Artem Shalimov, Jadwiga Bak-Misiuk, Klaus H. Ploog

Année:

2003

Langue:

english

Fichier:

PDF, 503 KB

english, 2003

X-ray diffraction peaks from misfit dislocations in double- and triple-crystal diffractometry

Journal:

Artem Shalimov, Kirill D. Shcherbachev, Jadwiga Bak-Misiuk, Andrzej Misiuk

Année:

2007

Langue:

english

Fichier:

PDF, 453 KB

english, 2007

Defect structure of silicon crystals implanted with H2+ ions

Journal: